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| Ordering number : ENN8328 ECH8601R N-Channel Silicon MOSFET ECH8601R Features * * * * * General-Purpose Switching Device Applications Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 12 6.5 40 1.4 1.5 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=4A, VGS=4.5V ID=4A, VGS=4.0V ID=4A, VGS=3.1V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 10 0.5 7.0 10 17 18 20 24 1140 420 190 23 24 30 35 1.3 typ max Unit V A A V S m m m m pF pF pF Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : WB Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405PE MS IM TB-00001317 No.8328-1/4 ECH8601R Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=6.5A VDS=10V, VGS=10V, ID=6.5A VDS=10V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V Ratings min typ 425 1500 4000 2860 26.8 1.4 5.1 0.75 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 7011-003 Top View 0.25 0.3 0.15 Electrical Connection 8 7 6 5 8 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 1 2 3 4 2.3 0.65 2.9 0.25 1 4 2.8 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VIN 4V 0V VIN ID=3.5A RL=2.86 VDD=10V 0.07 0.9 D PW=10s D.C.1% VOUT G Rg ECH8601R P.G 50 S Rg=1k No.8328-2/4 ECH8601R 6.5 ID -- VDS 4.0V 3.0V 2.5 V 4.5V 2.0 V 6.5 6.0 5.5 5.0 ID -- VGS VDS=10V 6.0 5.5 5.0 Drain Current, ID -- A 8.0V 6.0V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Drain Current, ID -- A 4.5 4.0 3.5 Ta=7 5C 0 0.2 0.4 0.6 0.8 1.0 1.2 VGS=1.5V 2.5 2.0 1.5 1.0 0.5 0 0.05 0.10 0.15 0.20 0.25 0.30 IT09488 50 1.4 25C 1.6 --25C 3.0 1.8 Drain-to-Source Voltage, VDS -- V 50 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT09489 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=2A Static Drain-to-Source On-State Resistance, RDS(on) -- m 45 40 35 30 25 20 15 10 5 0 0 4A Ta=25C 45 40 35 30 25 20 15 10 5 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 V =2.5 , VGS =2A 3.1V ID S= 4A, VG I D= 4.5V , V S= I D=4A G A, I D=4 =4.0V VGS 2 4 6 8 10 IT09490 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID Ambient Temperature, Ta -- C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT09491 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 2 10 7 5 C 75 C 3 2 25 1.0 0.1 0.01 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10000 7 7 10 IT09492 10 0 0.2 0.4 Ta=7 5 0.6 = Ta --2 25C -25C 0.8 C 5C Source Current, IS -- A 1.0 1.2 IT09493 SW Time -- ID td(off) Diode Forward Voltage, VSD -- V VGS -- Qg Switching Time, SW Time -- ns 5 3 2 Gate-to-Source Voltage, VGS -- V VDD=10V VGS=4V 9 8 7 6 5 4 3 2 1 VDS=10V ID=6.5A tf tr 1000 7 5 3 2 td(on) 100 0.1 0 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 IT09494 7 0 5 10 15 20 25 30 IT09495 Total Gate Charge, Qg -- nC PS No.8328-3/4 ECH8601R 100 7 5 3 2 ASO Allowable Power Dissipation, PD -- W 1.8 PD -- Ta Mounted on a ceramic board (900mm2!0.8mm) 1unit IDP=40A 10s 1m ID=6.5A Drain Current, ID -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 10 s 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0m ms DC s op era tio n To ta 1u lD ni t iss Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 ipa tio n 0.01 0.01 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -- V IT09496 Ambient Temperature, Ta -- C IT09497 Note on usage : Since the ECH8601R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8328-4/4 |
Price & Availability of ECH8601R
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